Tritiated Amorphous Silicon Betavoltaic Devices

نویسنده

  • H He
چکیده

When prepared by conventional evaporation or sputtering, thin films of amorphous silicon contain a large concentration of defects and microvoids.3,4 These give rise to localized states in the energy gap of the material.3,4 Plasma-enhanced chemical vapor deposition (PECVD), using silicon hydrides, significantly reduces the number of defects and thereby lowers the concentration of localized states in the energy gap.3–5 It is well known that hydrogen is responsible for defect passivation.3–5 Hydrogen atoms incorporated into these films satisfy the covalent bonds at defects and microvoids and also allow the lattice to relax, thereby reducing the density of localized states by several orders of magnitude.3–5

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Tritiated amorphous silicon betavoltaic devices - Circuits, Devices and Systems, IEE Proceedings [see also IEE Proceedings G- Circuits, Devices and

The introduction of tritium into hydrogenated amorphous silicon has given rise to a novel material with interesting physical properties and potential applications. Tritium undergoes radioactive decay, transforming into He and emitting an electron with average energy 5.7keV, at a rate equivalent to a half-life of 12.3 years. The decay of tritium results in the creation of electron– hole pairs an...

متن کامل

Amorphous silicon based betavoltaic devices

Hydrogenated amorphous silicon betavoltaic devices are studied both by simulation and experimentally. Devices exhibiting a power density of 0.1 W/cm 2 upon Tritium exposure were fabricated. However, a significant degradation of the performance is taking place, especially during the first hours of the exposure. The degradation behavior differs from sample to sample as well as from published resu...

متن کامل

Infrared vibration spectra of hydrogenated, deuterated, and tritiated amorphous silicon

This article presents infrared absorption data of amorphous silicon alloys in which the hydrogen isotopes deuterium and tritium have been substituted for hydrogen. Silicon–deuterium and silicon– tritium vibration frequencies are related to silicon–hydrogen vibration frequencies by simple mass relationships. The silicon–deuterium wagging vibration is broadened and blueshifted due to strong coupl...

متن کامل

Evaluation of a Silicon 90Sr Betavoltaic Power Source

Betavoltaic energy converters (i.e., β-batteries) are attractive power sources because of their potential for high energy densities (>200 MWh/kg) and long duration continuous discharge (>1 year). However, conversion efficiencies have been historically low (<3%). High efficiency devices can be achieved by matching β-radiation transport length scales with the device physics length scales. In this...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004